BAND GAP AND ELECTRONIC STRUCTURE OF DEFECTS IN THE TERNARY NITRIDE BP<SUB>3</SUB>N<SUB>6</SUB>: EXPERIMENT AND THEORY ArticleDe Boer T., Fattah M.F.A., Amin M.R., Moewes A., Ambach S.J., Vogel S., Schnick W.Journal of Materials Chemistry C. Том 10. 2022. С. 6429-6434
INVERSE-TUNABLE RED LUMINESCENCE AND ELECTRONIC PROPERTIES OF NITRIDOBERYLLOALUMINATES SR<SUB>2−X</SUB>BA<SUB>X</SUB>[BEAL<SUB>3</SUB>N<SUB>5</SUB>]:EU<SUP>2+</SUP> (X=0–2) ArticleElzer E., Schnick W., Strobel P., Weiler V., Schmidt P.J., Amin M.R., Moewes A.Chemistry - A European Journal. Том 28. 2022. e202104121 с.
ENERGY LEVELS OF EU<SUP>2+</SUP> STATES IN THE NEXT-GENERATION LED-PHOSPHOR SRLI<SUB>2</SUB>AL<SUB>2</SUB>O<SUB>2</SUB>N<SUB>2</SUB>:EU<SUP>2+</SUP> ArticleAmin M.R., Moewes A., Strobel P., Schmidt P.J., Schnick W.Journal of Materials Chemistry C. 2022.
DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN<SUB>2</SUB> ArticleDe Boer T., Moewes A., Häusler J., Rudel S.S., Schnick W., Strobel P., Boyko T.D.Journal of Physical Chemistry C. Том 125. 2021. С. 27959-27965
ELECTRONIC PROPERTIES OF CARBYNE CHAINS: EXPERIMENT AND THEORY ArticleDe Boer T., Moewes A., Zatsepin D., Raikov D., Kurmaev E., Zatsepin A.F.Journal of Physical Chemistry C. Том 125. 2021. С. 8268-8273
TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR<SUB>3- X</SUB>(N<SUB>1- X</SUB>O<SUB>X</SUB>)<SUB>4</SUB> ArticleBoyko T.D., Zerr A., Moewes A.ACS Applied Electronic Materials. Том 3. 2021. С. 4768-4773
COMPREHENSIVE BAND GAP AND ELECTRONIC STRUCTURE INVESTIGATIONS OF THE PROMINENT PHOSPHORS M<SUB>2</SUB>SI<SUB>5</SUB>N<SUB>8</SUB>:EU<SUP>2+</SUP>(M = CA, SR, BA) DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY ArticleTolhurst T.M., Moewes A., Braun C., Schnick W.Journal of Physical Chemistry C. Том 125. 2021. С. 25799-25806
UNRAVELING THE ENERGY LEVELS OF EU<SUP>2+</SUP>IONS INMBE<SUB>20</SUB>N<SUB>14</SUB>:EU<SUP>2+</SUP>(M= SR, BA) PHOSPHORS ArticleAmin M.R., Moewes A., Elzer E., Schnick W.Journal of Physical Chemistry C. Том 125. 2021. С. 11828-11837
ELECTRONIC STRUCTURE INVESTIGATION OF WIDE BAND GAP SEMICONDUCTORS - MG<SUB>2</SUB>PN<SUB>3</SUB>AND ZN<SUB>2</SUB>PN<SUB>3</SUB>: EXPERIMENT AND THEORY ArticleAl Fattah M.F., Kasap S., Amin M.R., Moewes A., Mallmann M., Schnick W.Journal of Physics Condensed Matter. Том 32. 2020. 405504 с.
ORIGIN AND CONTROL OF ROOM TEMPERATURE FERROMAGNETISM IN CO,ZN-DOPED SNO<SUB>2</SUB>: OXYGEN VACANCIES AND THEIR LOCAL ENVIRONMENT ArticleHo J., De Boer T., Braun P.M., Leedahl B., Moewes A., Manikandan D., Murugan R.Journal of Materials Chemistry C. Том 8. 2020. С. 4902-4908
DIRECT EVIDENCE OF CHARGE TRANSFER UPON ANION INTERCALATION IN GRAPHITE CATHODES THROUGH NEW ELECTRONIC STATES: AN EXPERIMENTAL AND THEORETICAL STUDY OF HEXAFLUOROPHOSPHATE ArticleDe Boer T., Moewes A., Lapping J.G., Cabana J., Read J.A., Fister T.T., Balasubramanian M.Chemistry of Materials. Том 32. 2020. С. 2036-2043
UNDERSTANDING OF LUMINESCENCE PROPERTIES USING DIRECT MEASUREMENTS ON EU<SUP>2+</SUP>-DOPED WIDE BANDGAP PHOSPHORS ArticleAmin M.R., Qamar A., Moewes A., Strobel P., Giftthaler T., Schnick W.Advanced Optical Materials. Том 8. 2020. 2000504 с.
FUNDAMENTAL CRYSTAL FIELD EXCITATIONS IN MAGNETIC SEMICONDUCTOR SNO<SUB>2</SUB>: MN, FE, CO, NI ArticleLeedahl B., Mccloskey D.J., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.Physical Chemistry Chemical Physics. Том 21. 2019. С. 11992-11998
ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3D-METAL DOPED IN<SUB>2</SUB>O<SUB>3</SUB> ArticleHo J., Becker J., Leedahl B., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.Journal of Materials Science: Materials in Electronics. Том 30. 2019. С. 14091-14098
BANDGAP AND ELECTRONIC STRUCTURE DETERMINATION OF OXYGEN-CONTAINING AMMONOTHERMAL INN: EXPERIMENT AND THEORY ArticleAmin M.R., De Boer T., Moewes A., Becker P., Hertrampf J., Niewa R.Journal of Physical Chemistry C. Том 123. 2019. С. 8943-8950