Boyko T.D.

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DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN2

Article

De Boer T., Moewes A., Häusler J., Rudel S.S., Schnick W., Strobel P., Boyko T.D.

Journal of Physical Chemistry C. Том 125. 2021. С. 27959-27965

TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR3- X(N1- XOX)4

Article

Boyko T.D., Zerr A., Moewes A.

ACS Applied Electronic Materials. Том 3. 2021. С. 4768-4773

BAND GAP AND ELECTRONIC STRUCTURE OF MGSIN2 DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY

Article

De Boer T., Boyko T.D., Moewes A., Braun C., Schnick W.

Physica Status Solidi. Rapid Research Letters. Том 9. 2015. С. 250-254

INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL3N4]: EU2+-EXPERIMENT AND CALCULATIONS

Article

Tolhurst T.M., Boyko T.D., Johnson N.W., Moewes A., Pust P., Schnick W.

Advanced Optical Materials. Том 3. 2015. С. 546-550

THE LOCAL CRYSTAL STRUCTURE AND ELECTRONIC BAND GAP OF Β-SIALONS

Article

Boyko T.D., Moewes A., Gross T., Schwarz M., Fuess H.

Journal of Materials Science. Том 49. 2014. С. 3242-3252

ELECTRONIC BAND GAP REDUCTION IN MANGANESE CARBODIIMIDE: MNNCN

Article

Boyko T.D., Green R.J., Moewes A., Dronskowski R.

Journal of Physical Chemistry C. Том 117. 2013. С. 12754-12761

ELECTRONIC STRUCTURE OF SPINEL-TYPE NITRIDE COMPOUNDS SI3N 4, GE3N4, AND SN3N4 WITH TUNABLE BAND GAPS: APPLICATION TO LIGHT EMITTING DIODES

Article

Boyko T.D., Hunt A., Moewes A., Zerr A.

Physical Review Letters. Том 111. 2013. 097402 с.

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE2AS2

Article

Mcleod J.A., Green R.J., Boyko T.D., Moewes A., Buling A., Neumann M., Skorikov N.A., Kurmaev E.Z., Finkelstein L.D., Ni N., Thaler A., Budko S.L., Canfield P.C.

Journal of Physics Condensed Matter. Том 24. 2012. 215501 с.

EPOXIDE SPECIATION AND FUNCTIONAL GROUP DISTRIBUTION IN GRAPHENE OXIDE PAPER-LIKE MATERIALS

Article

Hunt A., Boyko T.D., Bazylewski P., Chang G.S., Moewes A., Dikin D.A., Kurmaev E.Z.

Advanced Functional Materials. Том 22. 2012. С. 3950-3957

SELECTIVE RESPONSE OF MESOPOROUS SILICON TO ADSORBANTS WITH NITRO GROUPS

Article

Mcleod J.A., Boyko T.D., Moewes A., Kurmaev E.Z., Sushko P.V., Levitsky I.A.

Chemistry - A European Journal. Том 18. 2012. С. 2912-2922

STRUCTURAL AND BAND GAP INVESTIGATION OF GAN:ZNO HETEROJUNCTION SOLID SOLUTION PHOTOCATALYST PROBED BY SOFT X-RAY SPECTROSCOPY

Article

Mcdermott E.J., Boyko T.D., Green R.J., Moewes A., Kurmaev E.Z., Finkelstein L.D., Maeda K., Domen K.

Journal of Physical Chemistry C. Том 116. 2012. С. 7694-7700

CA3N2 AND MG3N2: UNPREDICTED HIGH-PRESSURE BEHAVIOR OF BINARY NITRIDES

Article

Braun C., Börger S.L., Schnick W., Boyko T.D., Moewes A., Miehe G., Ehrenberg H., Höhn P.

Journal of the American Chemical Society. Том 133. 2011. С. 4307-4315

ANION ORDERING IN SPINEL-TYPE GALLIUM OXONITRIDE

Article

Boyko T.D., Moewes A., Zvoriste C.E., Riedel R., Kinski I., Hering S., Huppertz H.

Physical Review B - Condensed Matter and Materials Physics. Том 84. 2011. 085203 с.

CLASS OF TUNABLE WIDE BAND GAP SEMICONDUCTORS Γ- (GEX SI1-X) 3 N4

Article

Boyko T.D., Moewes A., Bailey E., Mcmillan P.F.

Physical Review B - Condensed Matter and Materials Physics. Том 81. 2010. 155207 с.

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Другие авторы

Ketkov S.Y.

Записей: 1

Yip D.

Записей: 1

Список записей

DETECTING A HIERARCHY OF DEEP-LEVEL DEFECTS IN THE MODEL SEMICONDUCTOR ZNSIN<SUB>2</SUB>

TUNING THE ELECTRONIC BAND GAP OF OXYGEN-BEARING CUBIC ZIRCONIUM NITRIDE: C-ZR<SUB>3- X</SUB>(N<SUB>1- X</SUB>O<SUB>X</SUB>)<SUB>4</SUB>

BAND GAP AND ELECTRONIC STRUCTURE OF MGSIN<SUB>2</SUB> DETERMINED USING SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY

INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL<SUB>3</SUB>N<SUB>4</SUB>]: EU<SUP>2+</SUP>-EXPERIMENT AND CALCULATIONS

THE LOCAL CRYSTAL STRUCTURE AND ELECTRONIC BAND GAP OF Β-SIALONS

ELECTRONIC BAND GAP REDUCTION IN MANGANESE CARBODIIMIDE: MNNCN

ELECTRONIC STRUCTURE OF SPINEL-TYPE NITRIDE COMPOUNDS SI3N 4, GE3N4, AND SN3N4 WITH TUNABLE BAND GAPS: APPLICATION TO LIGHT EMITTING DIODES

EFFECT OF 3D DOPING ON THE ELECTRONIC STRUCTURE OF BAFE<SUB>2</SUB>AS<SUB>2</SUB>

EPOXIDE SPECIATION AND FUNCTIONAL GROUP DISTRIBUTION IN GRAPHENE OXIDE PAPER-LIKE MATERIALS

SELECTIVE RESPONSE OF MESOPOROUS SILICON TO ADSORBANTS WITH NITRO GROUPS

STRUCTURAL AND BAND GAP INVESTIGATION OF GAN:ZNO HETEROJUNCTION SOLID SOLUTION PHOTOCATALYST PROBED BY SOFT X-RAY SPECTROSCOPY

CA<SUB>3</SUB>N<SUB>2</SUB> AND MG<SUB>3</SUB>N<SUB>2</SUB>: UNPREDICTED HIGH-PRESSURE BEHAVIOR OF BINARY NITRIDES

ANION ORDERING IN SPINEL-TYPE GALLIUM OXONITRIDE

CLASS OF TUNABLE WIDE BAND GAP SEMICONDUCTORS Γ- (GE<SUB>X</SUB> SI<SUB>1-X</SUB>) 3 N<SUB>4</SUB>

Другие авторы

Ketkov S.Y.

Yip D.