ИЗЛУЧАТЕЛЬНЫЕ ХАРАКТЕРИСТИКИ КВАНТОВЫХ ЯМ НА ОСНОВЕ AlGaAs

Nowadays, GaAs-based heterostructures are practically irreplaceable and are widely used in optical amplifiers, lasers, photodetectors, IR sensors and lighting devices, in general, they are of considerable importance in photonics and electronics. Therefore, increasing the efficiency of devices based on these heterostructures is an extremely important task in modern science and technology. The main purpose of this work is to study the radiative characteristics of heterostructures based on AlGaAs quantum wells obtained by the method of MOCVD, as well as to find the dependence of the internal quantum efficiency on the growth parameters of these structures. A modified ABC method based on the recombination rate equation was used to calculate the internal quantum efficiency. The calculations were carried out using the measured values of the photoluminescence intensity depending on the excitation power. As a result, the dependences of the internal quantum efficiency on the geometry of the structure and the growth temperature of the hydride epitaxy were obtained. It has been demonstrated that by selecting the geometry of the heterostructure and the growth conditions, the value of the internal quantum efficiency can be increased. Such growth modes are promising for the creation of highly efficient radiating devices based on the quantum wells under consideration.