МОДЕЛИРОВАНИЕ МЕТОДОМ ТРАНСФЕРМАТРИЦЫ НЕОДНОРОДНЫХ БАРЬЕРНЫХ ДИОДОВ ШОТТКИ НА ОСНОВЕ КАРБИДА КРЕМНИЯ

In the last few years, semiconductor device technology based on quantum wells has reached a satisfactory level of maturity. But its calculation methods leave much to be desired, since it is quite cumbersome and time-consuming. The general purpose of the research is to explore the possibilities of a new method based on Networks to simulate quantum mechanical effects that work in minimal time with reasonable accuracy. We have selected the number of layers, the sequence of neurons in the layer and the number of neurons in the layers. So we were able to create a satisfactory modeling tool, but it still has ways to develop.