Annealing effect on the electronic structure and magnetic properties of Mn-doped ZnO films

Авторы
Jin J. 1, 2 , Zhang X.Y. 2 , Zhou Y.X. 2 , Chang G.S. 3
Journal
Semiconductor Science and Technology
Номер выпуска
3
Язык
English
Страницы
035012
Статус
Published
Том
27
Год
2012
Организации
  • 1 School of Material Science and Engineering|Shanghai University
  • 2 Department of Physics|Synchrotron Radiation Research Center|Fudan University
  • 3 Department of Physics and Engineering Physics|University of Saskatchewan
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