Sb- and Bi-doped Mg<sub>2</sub>Si: Location of the dopants, micro- and nanostructures, electronic structures and thermoelectric properties

Авторы

Farahi N. ¹ , Vanzant M. ¹ , Kleinke H. ¹ , Zhao J. ² , Tse J.S. ² , Prabhudev S. ³ , Botton G.A. ³ , Salvador J.R. ⁴ , Borondics F. ⁵ , Liu Z. ⁶

Journal

Издательство

Royal Society of Chemistry

Номер выпуска

Язык

English

Страницы

14983-14991

Статус

Published

Том

Год

2014

Организации

¹ Department of Chemistry, Waterloo Institute for Nanotechnology, University of Waterloo
² Department of Physics and Engineering Physics, University of Saskatchewan
³ Department of Materials Science and Engineering, McMaster University
⁴ General Motors Research and Development Center
⁵ Canadian Light Source Inc., University of Saskatchewan
⁶ Geophysical Laboratory, Carnegie Institution of Washington

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Sb- and Bi-doped Mg2Si: Location of the dopants, micro- and nanostructures, electronic structures and thermoelectric properties