International Journal on Minority and Group Rights. Том 10. 2003. С. 203-220
Electronic structure and structural defects in 3d-metal doped In2O3
Авторы
Ho J. 1 , Becker J. 1 , Leedahl B. 1 , Boukhvalov D.W. 3, 2 , Zhidkov I.S. 4 , Kukharenko A.I. 4 , Kurmaev E.Z. 5, 4 , Cholakh S.O. 4 , Gavrilov N.V. 6 , Brinzari V.I. 7 , Moewes A. 1
Издательство
Springer New York LLC
Номер выпуска
15
Язык
English
Страницы
14091-14098
Статус
Published
Том
30
Год
2019
Организации
- 1 Department of Physics and Engineering Physics|University of Saskatchewan
- 2 College of Science|Institute of Materials Physics and Chemistry|Nanjing Forestry University
- 3 Theoretical Physics and Applied Mathematics Department|Ural Federal University
- 4 Institute of Physics and Technology|Ural Federal University
- 5 M. N. Mikheev Institute of Metal Physics|Ural Branch of Russian Academy of Sciences
- 6 Institute of Electrophysics|Ural Branch of Russian Academy of Sciences
- 7 E. Pokatilov Laboratory of Physics and Engineering of Nanomaterials|Department of Theoretical Physics|Moldova State University
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Другие записи
Journal of Physics Condensed Matter. Том 31. 2019. 415301 с.