Hetero-integrated high-peak-optical-power laser source (940 nm) for time-of-flight sensors

The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser\r\nwith a dual-element composite 2 μm × 100 μm aperture and a compact heterothyristor switch is demonstrated. The\r\nachieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V. The leading\r\nedge of the laser pulse turn-on was 50 ps to a power level of 24.7 W, and the turn-on delay between the elements of the\r\ncomposite aperture was 160 ps