International Journal on Minority and Group Rights. Том 10. 2003. С. 203-220
InGaAs/InGaAsP/InP heterostructures for high-power photodetectors
A UTC photodetector based on InGaAs/InGaAsP/InP heterostructures grown by MOCVD is demonstrated. A model of the band diagram of the photodetector is proposed. Energy barriers that reduce the rate of hole removal from the absorbing layer are shown. A solution to reduce these barriers and increase the holes velocity is proposed. © 2022 IEEE.
Авторы
Bragin N.N. , Svetogorov V.N. , Ryaboshtan Yu.L. , Marmalyuk A.A. , Ivanov A.V. , Ladugin M.A. , Semenov A.S.
Conference proceedings
Издательство
Institute of Electrical and Electronics Engineers Inc.
Язык
English
Статус
Published
Год
2022
Организации
- 1 Stel'makh R&d Institute 'Polyus', Moscow, 117342, Russian Federation
- 2 Peoples Friendship University of Russia (RUDN University), Moscow, 117198, Russian Federation
Ключевые слова
InGaAs/InP; MOCVD; space charge effect; uni-traveling-carrier photodetector; UTC-PD
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