International Journal on Minority and Group Rights. Том 10. 2003. С. 203-220
When discussing bare surfaces of silicon crystal, the concept of dangling bonds is widely used. The surface reconstruction is usually explained in terms of a tendency of the bonds to be saturated. However, the current microscopic calculations show that the availability of dangling bonds on the topmost silicon atoms is controversial enough. © 1999 CriMiCo.