ELECTRONIC STRUCTURE AND STRUCTURAL DEFECTS IN 3D-METAL DOPED IN<SUB>2</SUB>O<SUB>3</SUB> СтатьяHo J., Becker J., Leedahl B., Boukhvalov D.W., Zhidkov I.S., Kukharenko A.I., Kurmaev E.Z., Cholakh S.O., Gavrilov N.V., Brinzari V.I., Moewes A.Journal of Materials Science: Materials in Electronics. Том 30. 2019. С. 14091-14098
BANDGAP AND ELECTRONIC STRUCTURE DETERMINATION OF OXYGEN-CONTAINING AMMONOTHERMAL INN: EXPERIMENT AND THEORY СтатьяAmin M.R., De Boer T., Moewes A., Becker P., Hertrampf J., Niewa R.Журнал физической химии С. Том 123. 2019. С. 8943-8950
LUMINESCENCE OF AN OXONITRIDOBERYLLATE: A STUDY OF NARROW-BAND CYAN-EMITTING SR[BE<SUB>6</SUB>ON<SUB>4</SUB>]:EU<SUP>2+</SUP> СтатьяStrobel P., Schnick W., De Boer T., Moewes A., Weiler V., Schmidt P.J.Chemistry of Materials. Том 30. 2018. С. 3122-3130
INTERCALATION-INDUCED EXFOLIATION AND THICKNESS-MODULATED ELECTRONIC STRUCTURE OF A LAYERED TERNARY VANADIUM OXIDE СтатьяAndrews J.L., De Jesus L.R., Marley P.M., Banerjee S., Tolhurst T.M., Moewes A.Chemistry of Materials. Том 29. 2017. С. 3285-3294
X-RAY SPECTROSCOPIC STUDY OF AMORPHOUS AND POLYCRYSTALLINE PBO FILMS, Α-PBO, AND Β-PBO FOR DIRECT CONVERSION IMAGING СтатьяQamar A., Leblanc K., Moewes A., Semeniuk O., Reznik A., Lin J., Pan Y.Scientific Reports. Том 7. 2017. 13159 с.
TUNABILITY OF ROOM-TEMPERATURE FERROMAGNETISM IN SPINTRONIC SEMICONDUCTORS THROUGH NONMAGNETIC ATOMS СтатьяLeedahl B., Abooalizadeh Z., Leblanc K., Moewes A.Physical Review B. Том 96. 2017. 045202 с.
STRUCTURE-INDUCED SWITCHING OF THE BAND GAP, CHARGE ORDER, AND CORRELATION STRENGTH IN TERNARY VANADIUM OXIDE BRONZES СтатьяTolhurst T.M., Leedahl B., Moewes A., Andrews J.L., Marley P.M., Banerjee S.Chemistry - A European Journal. Том 23. 2017. С. 9846-9856
THE ELECTRONIC STRUCTURE OF Ε′-V<SUB>2</SUB>O<SUB>5</SUB>: AN EXPANDED BAND GAP IN A DOUBLE-LAYERED POLYMORPH WITH INCREASED INTERLAYER SEPARATION СтатьяTolhurst T.M., Leedahl B., Moewes A., Andrews J.L., Banerjee S.Journal of Materials Chemistry A. Том 5. 2017. С. 23694-23703
HOW FUNCTIONAL GROUPS CHANGE THE ELECTRONIC STRUCTURE OF GRAPHDIYNE: THEORY AND EXPERIMENT СтатьяKetabi N., Tolhurst T.M., Leedahl B., Moewes A., Liu H., Li Y.Carbon. Том 123. 2017. С. 1-6
DESIGNING LUMINESCENT MATERIALS AND BAND GAPS: A SOFT X-RAY SPECTROSCOPY AND DENSITY FUNCTIONAL THEORY STUDY OF LI<SUB>2</SUB>CA<SUB>2</SUB>[MG<SUB>2</SUB>SI<SUB>2</SUB>N<SUB>6</SUB>]:EU<SUP>2+</SUP> AND BA[LI<SUB>2</SUB>(AL<SUB>2</SUB>SI<SUB>2</SUB>)N<SUB>6</SUB>]:EU<SUP>2+</SUP> СтатьяTolhurst T.M., Moewes A., Strobel P., Schnick W., Schmidt P.J.Журнал физической химии С. Том 121. 2017. С. 14296-14301
BULK VS. SURFACE STRUCTURE OF 3D METAL IMPURITIES IN TOPOLOGICAL INSULATOR BI<SUB>2</SUB>TE<SUB>3</SUB> СтатьяLeedahl B., Moewes A., Boukhvalov D.W., Kurmaev E.Z., Kukharenko A., Zhidkov I.S., Cholakh S.O., Gavrilov N.V., Le P.H., Luo C.W.Scientific Reports. Том 7. 2017. 5758 с.
ELECTRONIC STRUCTURE OF LI2 RUO3 STUDIED BY LDA AND LDA+DMFT CALCULATIONS AND SOFT X-RAY SPECTROSCOPY СтатьяPchelkina Z.V., Kurmaev E.Z., Streltsov S.V., Pitman A.L., Moewes A., Tan T.Y., Peets D.C., Park J.G.Physical Review B - Condensed Matter and Materials Physics. Том 91. 2015. 115138 с.
INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL<SUB>3</SUB>N<SUB>4</SUB>]: EU<SUP>2+</SUP>-EXPERIMENT AND CALCULATIONS СтатьяTolhurst T.M., Boyko T.D., Johnson N.W., Moewes A., Pust P., Schnick W.Advanced Optical Materials. Том 3. 2015. С. 546-550
ELECTRONIC STRUCTURE AND SPIN TRAPPING IN LIMNAS AND LIFEAS:MN СтатьяMcleod J.A., Perez I., Green R.J., Moewes A., Kurmaev E.Z., Xing L.Y., Wang X.C., Jin C.Q.Journal of Physics Condensed Matter. Том 27. 2015. 015504 с.
STABILITY AND ELECTRONIC CHARACTERISTICS OF EPITAXIAL SILICENE MULTILAYERS ON AG(111) СтатьяJohnson N.W., Moewes A., Muir D., Kurmaev E.Z.Advanced Functional Materials. Том 25. 2015. С. 4083-4090