ENERGY BAND GAPS AND EXCITED STATES IN SI QD/SIO<SUB>X</SUB>/R<SUB>Y </SUB>O<SUB>Z</SUB> (R = SI, AL, ZR) SUBOXIDE SUPERLATTICES СтатьяZatsepin A.F., Buntov E.A., Zatsepin D.A., Kurmaev E.Z., Pustovarov V.A., Ershov A.V., Johnson N.W., Moewes A.Journal of Physics Condensed Matter. Том 31. 2019. 415301 с.
INVESTIGATIONS OF THE ELECTRONIC STRUCTURE AND BANDGAP OF THE NEXT-GENERATION LED-PHOSPHOR SR[LIAL<SUB>3</SUB>N<SUB>4</SUB>]: EU<SUP>2+</SUP>-EXPERIMENT AND CALCULATIONS СтатьяTolhurst T.M., Boyko T.D., Johnson N.W., Moewes A., Pust P., Schnick W.Advanced Optical Materials. Том 3. 2015. С. 546-550
STABILITY AND ELECTRONIC CHARACTERISTICS OF EPITAXIAL SILICENE MULTILAYERS ON AG(111) СтатьяJohnson N.W., Moewes A., Muir D., Kurmaev E.Z.Advanced Functional Materials. Том 25. 2015. С. 4083-4090
MAGNESIUM DOUBLE NITRIDE MG<SUB>3</SUB>GAN<SUB>3</SUB> AS NEW HOST LATTICE FOR EU<SUP>2+</SUP> DOPING: SYNTHESIS, STRUCTURAL STUDIES, LUMINESCENCE, AND BAND-GAP DETERMINATION СтатьяHintze F., Seibald M., Schnick W., Johnson N.W., Muir D., Moewes A.Chemistry of Materials. Том 25. 2013. С. 4044-4052
THE ELECTRONIC STRUCTURE OF LITHIUM METAGALLATE СтатьяJohnson N.W., Mcleod J.A., Moewes A.Journal of Physics Condensed Matter. Том 23. 2011. 445501 с.