TIME-RESOLVED EVOLUTION OF PLASMA PARAMETERS IN A PLASMA IMMERSION ION IMPLANTATION SOURCE СтатьяMoreno J., Khodaee A., Okerstrom D., Bradley M.P., Couëdel L.Physics of Plasmas. Том 28. 2021. 123523 с.
CHARGED PARTICLE RADIATION INDUCED CHANGES TO OPTICAL PROPERTIES OF ACOUSTO-OPTIC MATERIALS СтатьяTaylor B.J., Bourassa A.E., Bradley M.P.Applied Optics. Том 59. 2020. С. 3706-3713
EFFECTS OF X-RAY IRRADIATION ON CHARGE TRANSPORT AND CHARGE COLLECTION EFFICIENCY IN STABILIZED A-SE PHOTOCONDUCTORS СтатьяKasap S.O., Yang J., Simonson B., Adeagbo E., Walornyj M., Belev G., Johanson R.E., Bradley M.P.Journal of Applied Physics. Том 127. 2020. 084502 с.
OPTIMAL PARAMETER(S) FOR THE SYNTHESIS OF NITROGEN-VACANCY (NV) CENTRES IN POLYCRYSTALLINE DIAMONDS AT LOW PRESSURE СтатьяEjalonibu H.A., Sarty G.E., Bradley M.P.Journal of Materials Science: Materials in Electronics. Том 30. 2019. С. 10369-10382
NANOSCALE IMAGING OF FREESTANDING NITROGEN DOPED SINGLE LAYER GRAPHENE СтатьяIyer G.R.S., Wang J., Wells G., Borondics F., Bradley M.P.Nanoscale. Том 7. 2015. С. 2289-2294
LIGHT-EMITTING DIODES FABRICATED FROM CARBON IONS IMPLANTED INTO P-TYPE SILICON СтатьяPurdy S.K., Bradley M.P., Chang G.S., Knights A.P.IEEE Transactions on Electron Devices. Том 62. 2015. С. 914-918
CHEMICAL REACTIONS AND APPLICATIONS OF THE REDUCTIVE SURFACE OF POROUS SILICON СтатьяMaley J.M., Sammynaiken R., Sham T.K., Hirose A., Bradley M.P., Yang Q.Journal of Nanoscience and Nanotechnology. Том 10. 2010. С. 6332-6339
PROSPECTS FOR BAND GAP ENGINEERING BY PLASMA ION IMPLANTATION СтатьяRisch M., Bradley M.P.Physica Status Solidi (C) Current Topics in Solid State Physics. Том 6. 2009. С. S210-S213
ELECTROLUMINESCENCE IN PLASMA ION IMPLANTED SILICON СтатьяDesautels P.R., Bradley M.P., Mantyka J., Steenkamp J.T.Physica Status Solidi (A) Applications and Materials Science. Том 206. 2009. С. 985-988